Integrated high-frequency MOS oscillator

Details Integrated high-frequency MOS oscillator Integrated high-frequency MOS oscillator

2005-05-24

2005-05-24

Lee, Benny (Department: 2817)

Oscillators

Solid state active element oscillator

Transistors

C331S1170FE, C331S03600C, C331S17700V

Reexamination Certificate

active

06897736

ABSTRACT:
An integrated high-frequency MOS oscillator circuit comprising at least one active element (F1) and a frequency determining circuit, the oscillator circuit further comprising at least one frequency selective network (R1, C1) which is built up from one or more resistors and one or more reactive elements, such that the oscillation at the desired oscillator frequency can take place substantially unhampered, while oscillations at parasitic oscillation frequencies are suppressed in that at the parasitic oscillation frequencies the loop gain is reduced to an absolute value less than 1.

REFERENCES:
patent: 6545555 (2003-04-01), Justice et al.
patent: 3429574 (1986-02-01), None
patent: PCTNL01/00115 (2001-05-01), None
Digital PLL Frequency Synthesizers, by Ulrich L. Rohde, 1983, Prentice Hall, pp. 142-143.*
“Synchronization of Tuned Inductor Capacitor Oscillators by Direct Injection,”IBM Technical Disclosure Bulletin,U.S. IBM Corp, New York, vol. 40, No. 10, Oct., 1997, pp. 29-30, XP000739410.

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