Integrated HBT and VCSEL structure and method of fabrication

Details Integrated HBT and VCSEL structure and method of fabrication Integrated HBT and VCSEL structure and method of fabrication

1992-02-03

1993-06-01

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 50, 372 96, 257565, H01S 319

Patent

active

052166864

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.

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Chan et al., "Optically Controlled Surface-Emitting Lasers," Appl. Phys. Lett., 58(21), May 27, 1991, pp. 2342-2344.
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Zhou et al., "Surface-Emitting Laser-Based Optical Bistake Switching Device", Appl. Phys. Lett., 59(21), Nov. 18, 1991, pp. 2648-2650.
Shibata et al., "Monolithic Integration of an InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistor," Appl. Phys. Lett. 45(3), Aug. 1, 1984, pp. 191-193.

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