Integrated ground shield

Details Integrated ground shield Integrated ground shield

2002-01-11

2004-06-01

Clark, Jasmine J B (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S659000, C257S750000, C257S723000, C257SE29327

Reexamination Certificate

active

06744129

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to integrated component devices, and more specifically to an improved design to prevent electrical coupling between integrated components.
BACKGROUND
Given the trend of the miniaturization of electronics for devices such as cell phones and personal digital assistants (PDAs), the use of integrated component devices is increasing. Methods for fabricating integrated component devices are known in the art. One prior art method of fabricating integrated resistors is to deposit, or form, a resistive layer on a silicon substrate and use portions of polysilicon to form resistive elements. Integrated capacitors may be formed by adding conductive and dielectric layers to the substrate. A metal-insulator-metal (MIM) type capacitor may be formed by depositing a conductive layer (e.g., aluminum) on the substrate. The conductive layer is followed by a dielectric layer, and another conductive layer, to form integrated capacitors.
FIG. 1
illustrates an integrated component device having resistors and capacitors formed thereon in accordance with the prior art. Integrated device
100
, shown in
FIG. 1
, has a substrate layer
105
. The substrate may be silicon, ceramic, glass, or other similar material. Substrate
105
has deposited, or formed, thereon an isolation layer
110
. The isolation layer
110
may be formed by oxidizing the surface of the silicon. Polysilicon layer
115
is used to form the resistive elements. Polysilicon layer may be deposited on isolation layer
110
with isolation layer
110
separating the substrate
105
from the polysilicon layer
115
. Another isolating layer
120
, which may also be silicon dioxide is deposited or formed upon layer
115
. Isolating layer
120
separates the resistive component from subsequently formed components. A MIM-type capacitor may be formed by adding a metal layer
125
(e.g., aluminum), an insulating layer
130
(e.g., a dielectric to improve capacitance), and another metal layer
135
, which may also be aluminum.
Active components may be fabricated using similar, albeit more involved, methods known in the art.
Typical integrated component devices may contain tens of thousands of components on a die having an area of less than 1 mm square. The components may be fabricated within a micron of each other. Such proximity may cause electrical coupling between capacitors and other components. Coupling may occur between inductors and other components as well. This problem may be addressed by increasing the distance between the components on the die. This physical separation has the drawback of reducing the number of components that may be fabricated on the die thereby increasing cost and system size.
SUMMARY OF THE INVENTION
An integrated component device is described. The integrated component device comprises a substrate having a plurality of integrated components formed thereon. The plurality of integrated components including at least one first type of integrated component and at least one second type of integrated component. Integrated within the device is a ground shield to electrically separate the at least one first type of integrated component from the at least one second type of integrated component.
Other features and advantages of the present invention will be apparent from the accompanying drawings and from the detailed description that follows below.


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PCT Search Report for PCT /US 03/00526, 8 pages, Sep. 4, 2003.

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