Integrated gate assisted turn-off, amplifying gate thyristor, an

Details Integrated gate assisted turn-off, amplifying gate thyristor, an Integrated gate assisted turn-off, amplifying gate thyristor, an

1976-08-24

1977-08-09

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29584, 29590, 357 38, B01J 1700

Patent

active

040401707

ABSTRACT:
An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the device. The common cathode-base region of the pilot and main thyristors also is common with the anode region of the diode. The current gain of the NPN transistor structure formed at the diode and the common anode-base region at the diode is less than the ratio of I.sub.FB /I.sub.g, where I.sub.FB is the forward anode current on triggering the main thyristor into the low impedance conduction state by applying a threshold negative gate assist current (I.sub.G) and an operating anode-cathode load potential, and I.sub.g is a negative gate current selected to assist in turn-off of the main thyristor. Preferably, the current gain of said NPN transistor structure at the diode is controlled by selectively irradiating the diode preferably with electron radiation, by adding a shallow impurity lip to the cathode region of the diode toward the main thyristor, or both.

REFERENCES:
patent: 3442722 (1969-05-01), Bauerlein
patent: 3611066 (1971-10-01), Knaus
patent: 3852612 (1974-12-01), Roberts
patent: 3967294 (1976-06-01), Takase

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