Integrated full wave diode bridge rectifier

Details Integrated full wave diode bridge rectifier Integrated full wave diode bridge rectifier

1975-01-30

1977-05-31

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200A, 307303, 357 86, H01L 2704

Patent

active

040273253

ABSTRACT:
A full wave rectifying junction-diode bridge rectifier is formed in an integrated silicon circuit. One of the two bridge output terminals is ohmically connected to the bulk doped silicon body so that this portion of the body may serve as the ground reference plane for the entire integrated circuit, including other signal processing circuits, and these other circuits may obtain their d.c. power from the other bridge output terminal. Thus, when the bulk doped body is of P-type conductivity, two of the four bridge diodes (grounded diodes) have their anodes connected to this ground reference terminal. Each of the grounded diodes is formed in an epitaxial pocket having two concentric P-type guard rings and a N-type guard ring positioned concentrically therebetween, all of which are tied to the ground point.

REFERENCES:
patent: 3466510 (1969-09-01), Mante
patent: 3649887 (1972-03-01), Keller et al.
patent: 3878551 (1975-04-01), Callahan, Jr.
patent: 3931634 (1976-01-01), Knight

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