Integrated film etching/chamber cleaning process

Details Integrated film etching/chamber cleaning process Integrated film etching/chamber cleaning process

1997-06-18

1999-02-09

Utech, Benjamin

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 12, 438724, B08B 600, H01L 21302

Patent

active

058688536

ABSTRACT:
The present invention discloses a method for in-situ cleaning a reactive ion etching (RIE) chamber after a silicon nitride etching process by maintaining a vacuum and a radial frequency power in the chamber while flowing a chlorine gas into the chamber at a sufficient flow rate. The chlorine gas cleaning step can be integrated into the process recipe for the etching process without significantly affecting the cycle time and the yield of the process.

REFERENCES:
patent: 4786360 (1988-11-01), Cote et al.
patent: 5271799 (1993-12-01), Langley
patent: 5356478 (1994-10-01), Chen et al.
"Damage to Si Substrates During SiO.sub.2 Etching: Opportunities of Subsequent Removal by Optimized Cleaning Procedures"; Vacuum, vol. 47, No. 5, pp. 437-443, May 1996, Richter et al.

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