Integrated field effect transistor and resonant tunneling diode

Details Integrated field effect transistor and resonant tunneling diode Integrated field effect transistor and resonant tunneling diode

1994-11-23

1996-07-09

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 24, 257192, H01L 2906, H01L 310328, H01L 310336

Patent

active

055347142

ABSTRACT:
This is an integrated device which comprises an integrated transistor and resonant tunneling diode where the transistor comprises a substrate 10, a buffer layer 12 over the substrate 10, and a channel layer 14 over the buffer layer 12; and the resonant tunneling diode (RTD) comprises a first contact layer 18, a first tunnel barrier layer 20 over the first contact layer 18, a quantum well 22 over the first tunnel barrier layer 20, a second tunnel barrier layer 24 over the quantum well 22, and a second contact layer 26 over the second tunnel barrier layer 24. Other devices and methods are also disclosed.

REFERENCES:
patent: 4814836 (1989-03-01), Thompson
patent: 5428224 (1995-06-01), Hayashi et al.

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