Integrated FET device having multiple outputs

Details Integrated FET device having multiple outputs Integrated FET device having multiple outputs

1984-05-04

1986-11-11

Edlow, Martin H.

357 2314, 357 24, 357 41, 357 86, 357 42, 357 234, H01L 2978, H01L 2702

Patent

active

046225676

ABSTRACT:
The invention discloses a compact construction of an n-channel surface MOS source follower in a p-pocket in an n-type substrate. The source is connected to the p-pocket in order to avoid feedback. The drain is connected to the substrate which acts as a supply line. This construction permits manufacturing several output amplifiers with a minimum pitch. The invention is of particular importance for CCD sensors.

REFERENCES:
patent: 3803461 (1974-04-01), Beneking
patent: 4152717 (1979-05-01), Satou et al.
patent: 4213140 (1980-07-01), Okabe et al.
Beck et al, "High Density Frame Transfer Image Sensor", Jap. Jour. of App. Physics, vol. 22 (1983) Suppl. 22-1, pp. 109-112.

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