Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1994-07-11
1996-03-19
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257502, 257553, H01L 2900
Patent
active
055005519
ABSTRACT:
A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides a connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor.
REFERENCES:
patent: 4458158 (1984-07-01), Mayrand
patent: 4965215 (1990-10-01), Zambrano et al.
patent: 5065213 (1991-11-01), Frisina et al.
patent: 5118635 (1992-06-01), Frisina et al.
patent: 5119161 (1992-06-01), Zambrano et al.
Paparo Mario
Puzzolo Santo
Zambrano Raffaele
Consorzio per la Ricerca Sulla Microelettronica nel Mezzogiorro
Formby Betty
Groover Robert
Hardy David B.
Limanek Robert P.
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