Integrated emitter switching configuration using bipolar transis

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...

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257502, 257553, H01L 2900

Patent

active

055005519

ABSTRACT:
A bipolar power transistor and a low voltage bipolar transistor are combined in an emitter switching or a semibridge configuration in an integrated structure. In a version with non-isolated components, the components of the structure are totally or partially superimposed on each other, partly in a first epitaxial layer and partly in a second epitaxial layer, and the low voltage bipolar transistor is situated above the emitter region of the bipolar power transistor which is thus a completely buried active structure. In a version with isolated components, there are two P+ regions in an N- epitaxial layer. The first P+ region constitutes the power transistor base and encloses the N+ emitter region of the power transistor. The second P+ region encloses two N+ regions and one P+ region, constituting the collector, emitter, and base regions respectively of the low voltage transistor. A metallization on the front of the chip provides a connection between the collector contact of the low voltage transistor and the emitter contact of the power transistor.

REFERENCES:
patent: 4458158 (1984-07-01), Mayrand
patent: 4965215 (1990-10-01), Zambrano et al.
patent: 5065213 (1991-11-01), Frisina et al.
patent: 5118635 (1992-06-01), Frisina et al.
patent: 5119161 (1992-06-01), Zambrano et al.

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