Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1997-09-19
1998-11-24
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257277, 257579, 257728, H07L 27082
Patent
active
058411844
ABSTRACT:
A silicon bipolar junction transistor in integrated form is disclosed having a ballast resistance integrated onto a silicon chip. This resistance is for the purpose of thermal stability. In addition, a bypass capacitance circuit is placed in parallel with the ballast resistance again in integrated form. The silicon BJT is flip-chip mounted on a heterolithic microwave integrated circuit glass substrate having the integrated bypass capacitor circuit fabricated directly thereon. This bypass capacitor circuit is electrically in contact with the emitter fingers of the bipolar junction transistor.
REFERENCES:
patent: 3414969 (1968-12-01), Blum
patent: 3918080 (1975-11-01), Kerr
patent: 4689655 (1987-08-01), Sonnenberger
patent: 5161000 (1992-11-01), Koga
patent: 5349239 (1994-09-01), Sato
patent: 5371405 (1994-12-01), Kagawa
patent: 5373185 (1994-12-01), Sato
patent: 5488252 (1996-01-01), Johansson et al.
patent: 5519233 (1996-05-01), Fukasawa
patent: 5532506 (1996-07-01), Tserng
patent: 5612556 (1997-03-01), Malhi et al.
patent: 5652693 (1997-07-01), Chou et al.
patent: 5696466 (1997-12-01), Li
Electro International 1994, Hynes Convention Center, Boston, MA, "Glass Microwave IC Packaging Technology," Richard Perko, publication date Oct. 5, 1994, pp. 857 through 862.
XP-002053834, 1996 IEEE MTT-S Digest, "A New Technology for Si Microwave Power Transistor Manufacturing," Ping Li, pp. 103 through 105.
European Patent Office, Patent Abstracts of Japan, Publication No. 07221190, Aug. 18, 1995, Sekine Yasuchi, "Semiconductor Integrated Circuit Device".
European Patent Office, Patent Abstracts of Japan Publication No. 05277279, Aug. 20, 1993, Kawashima Shingo, "Hybrid Integrated Circuit".
International Search Report, dated Feb. 13, 1998.
Francos William
Hardy David B.
The Whitaker Corporation
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