Integrated emitter devices having beam divergence reducing...

Details Integrated emitter devices having beam divergence reducing... Integrated emitter devices having beam divergence reducing...

2006-12-05

2006-12-05

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S079000, C257SE33068

Reexamination Certificate

active

07145182

ABSTRACT:
In one embodiment, a method for fabricating an integrated emitter device occurs on a flat substrate such as printed circuit board (PCB). A cup of suitable material such as epoxy is transfer molded on top of the substrate. An emitter is attached to the substrate within the epoxy cup. Wire bonding may occur to provide a path to the emitter. An epoxy encapsulation layer is provided to encapsulate the emitter. The encapsulation layer may be shaped to provide a lens for the emitter.

REFERENCES:
patent: 5119174 (1992-06-01), Chen
patent: 6355946 (2002-03-01), Ishinaga
patent: 6638780 (2003-10-01), Fukasawa et al.
patent: 6642547 (2003-11-01), Matsubara et al.

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