Integrated electronics suitable for optical communications

Details Integrated electronics suitable for optical communications Integrated electronics suitable for optical communications

1987-08-07

1988-05-17

Davie, James W.

357 30, 357 40, 357 41, 357 54, H01L 2978, H01L 2702, H01L 2934

Patent

active

047454490

ABSTRACT:
High gain MESFETs, integratable with a photodetector for optical communications, result from a specific gate structure. In particular, a dielectric region, such as an undoped indium aluminum arsenide region overlaid by a thin aluminum oxide region, is employed. This gate combination with, for example, an n-type indium gallium arsenide active channel yields transconductances as high as 130 mS/mm.

REFERENCES:
patent: 4042945 (1977-06-01), Lin et al.
patent: 4442445 (1984-04-01), Malik et al.
Liao et al., An In.sub.0.53 Ga.sub.0.47 As/Si.sub.3 N.sub.4 n-Channel Inversion Mode MISFET", IEEE Electron Device Letters, vol. EDL-2, No. 11, Nov. 1981, pp. 288-290.
Barnard et al., "Double Heterostructure Ga.sub.0.47 In.sub.0.53 As MESFETs with Submicron Gates", IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980, pp. 174-176.

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