Thermal measuring and testing – Transformation point determination
Reexamination Certificate
2011-08-30
2011-08-30
Verbitsky, Gail (Department: 2855)
Thermal measuring and testing
Transformation point determination
C374S170000, C374S178000, C257S506000, C073S073000, C327S565000
Reexamination Certificate
active
08007167
ABSTRACT:
A single chip wireless sensor (1) comprises a microcontroller (2) connected to a transmit/receive interface (3), which is coupled to a wireless antenna (4) by an L-C matching circuit. The sensor (1) senses gas or humidity and temperature. The device (1) is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material (57) with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes (60). This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.
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O'Keefe, Egan, Peterman & Ender LLP
Silicon Laboratories Inc.
Verbitsky Gail
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