Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-05-14
1991-04-30
Prenty, Mark
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
357 65, 357 68, 357 22, 505703, 505873, H01L 2906, H01L 2348, H01L 2980, H01L 3912
Patent
active
050123190
ABSTRACT:
Integrated electronic assemblies according to the invention, typically semiconductor IC chips, comprise an air gap transmission line. The line has high propagation speed and low dispersion, and can be readily manufactured. Various embodiments of the inventive transmission line are disclosed. In all cases the semiconductor substrate is etched so as to remove at least a substantial portion of the semiconductor material under and/or adjacent to the conductor line or lines. Insulator material (e.g., SiO.sub.2) serves, inter alia, to support the conductor.
REFERENCES:
Semiconductor International, Sep. 1990, p. 38 by Iscoff.
"Microstrip Lines and Slotlines", by K. C. Gupta et al., Artech House, Inc., 1979, pt. 65.
"Theoretical and Experimental Characterization of Nonsymmetrically Shielded Coplanar Waveguides for Millimeter-Wave Circuits", by F. Alessandri et al., IEEE Transactions on Microwave Theory and Techniques, vol. 37, No. 12, Dec. 1989, pp. 2020-2027.
"40 GHz Measurement on InP/Air Gap Line by Picosecond Electro-Optic Sampling", by S. Loualiche, Electronics Letters, vol. 26, No. 4, Feb. 15, 1990, pp. 266-267.
"Development of 18 GHz GaAs Static Frequency Dividers and Their Evaluation by Electrooptic Sampling", by F. F. Jensen et al., Picosecond Electronics and Optoelectronics II, Proceedings of the Second OSA-IEEE (LEOS) Incline Village, Nevada, Jan. 14-16, '87, pp. 184-187.
Dykaar Douglas R.
Levi Anthony F. J.
AT&T Bell Laboratories
Pacher E. E.
Prenty Mark
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