Integrated electroacoustic transducer with built-in bias

Details Integrated electroacoustic transducer with built-in bias Integrated electroacoustic transducer with built-in bias

1983-07-07

1985-06-18

Rubinson, Gene Z.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

29594, 307400, 381111, 381114, H01G 516

Patent

active

045242470

ABSTRACT:
Disclosed is an electroacoustic transducer structure which can be formed in a semiconductor substrate and incorporated as part of an integrated circuit, and which provides a built-in dc bias for operation. An appropriate density of fixed charge is provided in an insulating layer adjacent to one of the electrodes in the gap between electrodes. Methods of manufacture are also disclosed including means for introducing the charge by contacting the insulating layer with a liquid medium, plasma charging, or by ion beam implanting into the layer.

REFERENCES:
patent: 3118022 (1964-01-01), Sessler et al.
patent: 4149095 (1979-04-01), Poirier et al.
patent: 4207442 (1980-06-01), Freeman
patent: 4250415 (1981-02-01), Lewiner
patent: 4261086 (1981-04-01), Giachino

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