Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-20
2006-06-20
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000, C257S762000, C257S750000, C257S751000
Reexamination Certificate
active
07064439
ABSTRACT:
An integrated electrical circuit having a plurality of structure planes is described. Electrically active elements are situated on at least one element structure plane, where at least one insulation layer is disposed above the element structure plane. Electrical connecting leads are disposed within and/or above the insulation layer, where at least a portion of the connecting leads contain copper. At least one diffusion blocker is disposed underneath the connecting leads, which diffusion blocker impedes and/or prevents the diffusion of copper. The integrated electrical circuit is configured according to the invention such that the diffusion blocker is configured as a blocker layer which is interrupted only in the region of contact holes and/or connection pieces and that the blocker layer is situated between the element structure plane and the insulation layer.
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Berthold Jörg
Schwarzl Siegfried
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Nguyen Cuong
Stemer Werner H.
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