Integrated edge structure for high voltage semiconductor devices

Details Integrated edge structure for high voltage semiconductor devices Integrated edge structure for high voltage semiconductor devices

1994-06-28

1996-02-06

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257565, 257578, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

054897998

ABSTRACT:
An integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor device top surface is described. The edge structure comprises a first, lightly doped ring of the first conductivity type obtained in a first, lightly doped epitaxial layer of a second conductivity type and surrounding said diffused region, and a second, lightly doped ring of the first conductivity type, comprising at least one portion superimposed on and merged with said first ring, obtained in a second, lightly doped epitaxial layer of the second conductivity type grown over the first epitaxial layer.

REFERENCES:
Patent Abstracts of Japan, vol. 6, No. 185 (E-132) (1063) Sep. 21, 1982 & JP-A-57100744.

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