Integrated dry-wet semiconductor layer removal apparatus and met

Details Integrated dry-wet semiconductor layer removal apparatus and met Integrated dry-wet semiconductor layer removal apparatus and met

1990-10-19

1993-07-13

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 1566591, 156651, 156637, 156626, H01L 2100

Patent

active

052270017

ABSTRACT:
A system and process for removing a layer of a defined composition from a semiconductor wafer by performing at least one dry layer removal operation and at least one wet removal operation. A dry removal unit and a wet removal unit are disposed adjacent one another and robot mechanisms are provided to automatically transfer one wafer at a time through each unit in turn. The robot mechanisms are constructed to contact each wafer substantially at its edge in order to assure uniform treatment of both major surfaces of the wafer.
For stripping a resist layer from a wafer, the dry stripping operation can be performed first to remove a portion of the layer, after which the remainder of the layer is removed by the wet stripping operation. At the end of the wet stripping operation, the wafer is rinsed in water and used rinse water is monitored to determine at least one of its resistivity and total organic content in order to produce an indication that removal of undesired materials from the wafer surfaces has been completed. Subsequent to the wet treatment, the wafer is subjected to a cleaning with an aqueous mist on which ultrasonic vibrations are imposed.

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Durney, Ed.; "Electroplating Engineering Handbook"; Van Nostrand Reinhold Co.; .COPYRGT.1984; New York, N.Y.; pp. 691-709.

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