Integrated distributed inductive-capacitive network

Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device

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Details

257310, 257532, 257533, 257531, 333184, 333185, 333174, H01L 2993

Patent

active

052834620

ABSTRACT:
An integrated-distributed-inductive-capacitive network (100) having a high dielectric electronically-tunable semiconductor integrated capacitor. The network (100) also includes a conductive layer (126) formed on the high dielectric semiconductor integrated capacitor, to provide the distributed resistance of the network (100). External contact to the network (100) is provided via a plurality of contact terminals (122A and 122B) which are coupled to the conductive layer (126).

REFERENCES:
patent: 3471756 (1969-10-01), McAfee
patent: 3624895 (1971-12-01), MacIver
patent: 3644850 (1972-02-01), Ho
patent: 3890631 (1975-06-01), Tiemann
patent: 3996529 (1976-12-01), Curtice
patent: 4459570 (1984-07-01), Delaballe et al.
patent: 4799034 (1989-01-01), Silverman et al.
patent: 4888568 (1989-12-01), Kawaguchi

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