Coherent light generators – Particular active media – Semiconductor
Patent
1996-08-05
1999-03-16
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 26, 372 96, 372102, H01S 310, H01S 319
Patent
active
058839143
ABSTRACT:
A GCL is formed on a first major surface of a semi-insulating InP substrate. Specifically, an InGaAsP active layer, an InGaAsP waveguide path and a striped grating having two phase shift portions are formed on the first major surface of the InP substrate. An EA modulator is formed on a second major surface of the semi-insulating InP substrate. Specifically, a p-InP layer, an MQW structure of 100-layer, an n.sup.- -InP layer and an n.sup.+ -InP layer are formed on the second major surface of the InP substrate. The first major surface and second major surface of the InP substrate are inclined to each other by a few degrees.
REFERENCES:
patent: 4958357 (1990-09-01), Kinoshita
patent: 5056098 (1991-10-01), Anthony et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5170402 (1992-12-01), Ogita et al.
patent: 5408486 (1995-04-01), Shoji
patent: 5548607 (1996-08-01), Tsang
Patent Abstracts of Japan, Kokai No. 6-21581, vol. 18, No. 230, Apr. 26, 1994.
Scherer, et al., "Fabrication of Microlasers and Microresonato Optical Switches", Applied Physics Letters, vol. 55, No. 26, Dec. 25, 1996, pp. 2724-2726.
Davie James W.
Kabushiki Kaisha Toshiba
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