Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1998-01-30
2000-10-03
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257574, 257575, 257593, 438205, 438206, 438210, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
061277231
ABSTRACT:
An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of the first transistor, and a quenching element having a terminal connected to a base terminal of the first transistor. The quenching element is formed within the base region or the emitter region of the first transistor.
REFERENCES:
patent: 4205332 (1980-05-01), Conti et al.
patent: 4755772 (1988-07-01), Khanna
patent: 4884114 (1989-11-01), Spenke et al.
patent: 5866461 (1999-02-01), Puzzolo et al.
Aiello Natale
La Barbera Atanasio
Spampinato Sergio
Sueri Stefano
Galanthay Theodore E.
Saadat Mahshid
SGS-Thomson Microelectronics S.R.L.
Wilson Allan R.
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