Integrated device for shielding the injection of charges into th

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3072962, 357 86, H01L 27082

Patent

active

050218603

ABSTRACT:
The device for shielding the electrons injected towards the substrate by an epitaxial pocket which reaches a negative voltage with respect to said substrate, comprises a debiasing transistor arranged in reverse configuration (with collector and emitter swapped) in the same epitaxial pocket reaching a negative voltage. The transistor is connected with its emitter and its collector between the buried layer of the pocket reaching a negative voltage and the substrate, so as to debias the junction formed by the buried layer and the substrate.

REFERENCES:
patent: 3890634 (1975-06-01), Ruegg
patent: 3931634 (1976-01-01), Knight
patent: 4021687 (1977-05-01), Yoshimura
patent: 4233618 (1980-11-01), Genesi
patent: 4466011 (1984-08-01), Van Zanten
patent: 4496849 (1985-01-01), Kotowski

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated device for shielding the injection of charges into th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated device for shielding the injection of charges into th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated device for shielding the injection of charges into th will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1030355

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.