Integrated device for shielding charge injection into the substr

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357 47, 357 40, 357 41, 357 42, 357 43, 357 44, 357 13, H01L 2704

Patent

active

048901490

ABSTRACT:
This integrated device for shielding injected charges in driving circuits for inductive and/or capacitive loads comprises four integrated structures including a first barrier region with high resistivity which surrounds the buried layer of the epitaxial flyback pocket which may be set at a potential lower than ground on the side of the buried layer which faces the driving circuit pocket; a first charge collecting region provided in the epitaxial flyback pocket; a third low-loss diode structure, formed in an epitaxial pocket which is isolated from the flyback pocket and is arranged between the latter and the driving circuit, and connected so as to clamp the voltage between the epitaxial flyback pocket and the substrate to the diode direct conduction voltage; and, finally, a last barrier structure formed by a charge collecting region connected to the supply voltage.

REFERENCES:
patent: 4202006 (1980-05-01), Khajezadeh
patent: 4661838 (1987-04-01), Wildi et al.
Alameddine, "Protective Circuit for Ingetrated Semiconductor Devices," IBM Technical Disclosure Bulletin, vol. 20, No. 10, Mar. 1978, pp. 3962-3963.
No author, "Electronics International", Electronics, Aug. 31, 1970, p. 137.

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