Integrated core microelectronic package

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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Details

C438S108000, C438S613000, C438S616000, C257S738000

Reexamination Certificate

active

06825063

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to apparatus and processes for packaging microelectronic dice. In particular, the present invention relates to a packaging technology that encapsulates a microelectronic die within a microelectronic package core.
2. State of the Art
Higher performance, lower cost, increased miniaturization of integrated circuit components, and greater packaging density of integrated circuits are ongoing goals of the computer industry. As these goals are achieved, microelectronic dice become smaller. Of course, the goal of greater packaging density requires that the entire microelectronic die package be equal to or only slightly larger (about 10% to 30%) than the size of the microelectronic die itself. Such microelectronic die packaging is called a “chip scale packaging” or “CSP”.
As shown in
FIG. 20
, true CSP involves fabricating build-up layers directly on an active surface
204
of a microelectronic die
202
. The build-up layers may include a dielectric layer
206
disposed on the active surface
204
. Conductive traces
208
may be formed on the dielectric layer
206
, wherein a portion of each conductive trace
208
contacts at least one contact
212
on the active surface
204
. External contacts, such as solder balls or conductive pins for contact with an external component (not shown), may be fabricated to electrically contact at least one conductive trace
208
.
FIG. 20
illustrates the external contacts as solder balls
214
which are surrounded by a solder mask material
216
on the dielectric layer
206
. However in such true CSP, the surface area provided by the microelectronic die active surface
204
generally does not provide enough surface for all of the external contacts needed to contact the external component (not shown) for certain types of microelectronic dice (e.g., logic).
Additional surface area can be provided with the use of an interposer, such as a substrate (substantially rigid material) or a flex component (substantially flexible material).
FIG. 21
illustrates a substrate interposer
222
having a microelectronic die
224
attached to and in electrical contact with a first surface
226
of the substrate interposer
222
through small solder balls
228
. The small solder balls
228
extend between contacts
232
on the microelectronic die
224
and conductive traces
234
on the substrate interposer first surface
226
. The conductive traces
234
are in discrete electrical contact with bond pads
236
on a second surface
238
of the substrate interposer
222
through vias
242
that extend through the substrate interposer
222
. External contacts
244
are formed on the bond pads
236
(shown as solder balls). The external contacts
244
are utilized to achieve electrical communication between the microelectronic die
224
and an external electrical system (not shown).
The use of the substrate interposer
222
requires number of processing steps, which increases the cost of the package. Additionally, the use of the small solder balls
228
presents crowding problems which can result in shorting between the small solder balls
228
and can present difficulties in inserting underfill material between the microelectronic die
224
and the substrate interposer
222
to prevent contamination and to increase mechanical reliability. Furthermore, necessity of having two sets of solder balls (i.e., small solder balls
228
and external contacts
244
) to achieve connection between the microelectronic die
224
and the external electrical system decreases the overall performance of the microelectronic die package.
Therefore, it would be advantageous to develop new apparatus and techniques to provide additional surface area to form traces for use in CSP applications and eliminate the necessity of the substrate interposer.


REFERENCES:
patent: 5048179 (1991-09-01), Shindo et al.
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5422513 (1995-06-01), Marcinkiewicz et al.
patent: 5497033 (1996-03-01), Fillion et al.
patent: 5527741 (1996-06-01), Cole et al.
patent: 5703400 (1997-12-01), Wojnarowski et al.
patent: 5745984 (1998-05-01), Cole, Jr. et al.
patent: 5889654 (1999-03-01), Pierson et al.
patent: 5894108 (1999-04-01), Mostafazadeh et al.
patent: 6117704 (2000-09-01), Yamaguchi et al.
patent: 6162661 (2000-12-01), Link
patent: 6271469 (2001-08-01), Ma et al.
patent: 6368894 (2002-04-01), Shen
patent: 2425626 (1975-12-01), None
patent: 19539181 (1997-04-01), None
patent: 11045955 (1999-02-01), None
patent: 11312868 (1999-11-01), None
Patents Abstracts of Japan, vol. 011, No. 171, No. 171 (E512), Jun. 2, 1987 & JP 62 004351 A (Toshiba Corp,), Jan. 10, 1987 abstract.

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