Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-08-31
1996-07-30
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257531, 257532, 257536, 257538, H01L 2900
Patent
active
055414427
ABSTRACT:
An improved configuration of a capacitor formed with FET technology and a resistor and/or conductor is provided. In this configuration a capacitor is formed in which the diffusion zone of the substrate is used as one plate of the capacitor and what would normally be the gate electrode of an FET is used as the other plate of the capacitor, with the two plates being separated by a conventional thin dielectric gate oxide layer. An insulator, such as silicon dioxide overlays the gate electrode, and electrical connections to the gate electrode and diffusion zone are made through the insulator to allow the two plates of the capacitor to be connected to various devices or components as required. The top surface of this insulation layer is also used to form metal resistors. Depending on the value of required resistance, a second insulating layer may be used and a second level of metal used to connect segments of the resistors formed on the first layer of metal to form a longer resistor. This second layer of metal may also be used to form inductors. Moreover both inductors and resistors can be formed; however this may require a third layer of metal for connection purposes.
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Keil Richard F.
Kelkar Ram
Novof Ilya I.
Oppold Jeffery H.
Short Kenneth D.
Crane Sara W.
International Business Machines - Corporation
Tang Alice W.
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