Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-09-09
1999-12-07
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, H01L 2976
Patent
active
05998807&
ABSTRACT:
Semiconductor islands respectively comprise at least a Si.sub.1-x Ge.sub.x layer and a distorted silicon layer that exhibits essentially the same lattice constant as the Si.sub.1-x Ge.sub.x layer are formed on an insulating layer that is located on a carrier plate. The semiconductor islands are preferably formed by selective epitaxy and comprise p-channel MOS transistors and/or n-channel MOS transistors.
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Franosch Martin
Lustig Bernhard
Schaefer Herbert
Monin, Jr. Donald L.
Siemens Aktiengesellschaft
Wille Douglas A.
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