Integrated circuits with contemporaneously formed array...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field

Reexamination Certificate

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C257S758000, C365S174000

Reexamination Certificate

active

07126200

ABSTRACT:
The invention relates to interconnects for an integrated circuit memory device. Embodiments of the invention include processes to fabricate interconnects for memory devices in relatively few steps. Embodiments of the invention further include memory devices with metallization layers having unequal pitch dimensions in different areas of the chip, thereby permitting simultaneous fabrication of array electrodes and electrical interconnects in different areas of the chip. This reduces the number of fabrication steps used to make interconnects, thereby speeding up fabrication and reducing production costs.

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