Integrated circuits which compensate for local conditions

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307448, 307451, 307452, 307491, H03K 19003, H03K 19094, H03K 1920, H03K 1706

Patent

active

051171309

ABSTRACT:
Apparatus for compensating for the effect of a local condition on an active element in a portion of an integrated circuit. The apparatus includes a detecting element in the portion of the integrated circuit which is subject to the local condition and produces a response to the local condition which is proportional to the local condition's effect on the active element and a compensation element which is coupled to the detecting element and to the portion for reacting to the response of the detecting element tot he local condition by providing a compensating input to the portion which is proportional to the response and which compensates for the local condition's effect on the active element. An embodiment of the apparatus which compensates for leakage currents in FETs in a dynamic CMOS integrated circuit employs one or more FETs which are interspersed among active FETs as the detecting element and a current mirror as the compensating element. The current mirror responds to the leakage current in the detecting element FETs by producing a compensating current to compensate for the leakage current in the active FETs. The embodiment is employed in a dynamic NOR gate and a dynamic PLA.

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M. Shoji, CMOS Digital Circuit Technology, Prentice-Hall, Englewood Cliffs, NJ, 1998, pp. 210-221 and 329-341.

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