Integrated circuits utilizing amorphous oxides

Details Integrated circuits utilizing amorphous oxides Integrated circuits utilizing amorphous oxides

2011-01-04

2011-01-04

Fahmy, Wael M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S056000, C257S059000, C257S062000, C257S072000, C257SE29083, C257SE29092, C257SE29101

Reexamination Certificate

active

07863611

ABSTRACT:
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3is used for the N-type region.

REFERENCES:
patent: 6075256 (2000-06-01), Kaifu et al.
patent: 6909114 (2005-06-01), Yamazaki
patent: 7189992 (2007-03-01), Wager, III et al.
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2005/0173734 (2005-08-01), Yoshioka et al.
patent: 2005/0199959 (2005-09-01), Chiang et al.
patent: 2006/0108529 (2006-05-01), Saito et al.
patent: 2006/0110867 (2006-05-01), Yabuta et al.
patent: 2006/0113536 (2006-06-01), Kumomi et al.
patent: 2006/0113539 (2006-06-01), Sano et al.
patent: 05-251705 (1993-09-01), None
patent: 08-032094 (1996-02-01), None
patent: 2000-44236 (2000-02-01), None
patent: 2003-298062 (2003-10-01), None
patent: 2004-103957 (2004-04-01), None
patent: WO 03/098699 (2003-11-01), None
patent: WO 2004/038757 (2004-05-01), None
patent: WO 2005/088726 (2005-09-01), None
patent: WO 2005/093846 (2005-10-01), None
patent: WO 2005/093847 (2005-10-01), None
patent: WO 2005/093848 (2005-10-01), None
patent: WO 2005/093849 (2005-10-01), None
patent: WO 2005/093850 (2005-10-01), None
patent: WO 2005/093851 (2005-10-01), None
patent: WO 2005/093852 (2005-10-01), None
patent: WO 2006/051993 (2006-05-01), None
patent: WO 2006/051994 (2006-05-01), None
patent: WO 2006/051995 (2006-05-01), None
Narushima, A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes, Adv. Mat. 15, 2003, pp. 1409-1413.
Fortunato, wide bandgap high mobility ZnO thin film transistors produced at room temperature, Appl. Phys. Lett. 85, 2004, pp. 2541-2543.
“Carrier Transport in Transparent Amorphous Oxide Semiconductor InGaZnO4”, Nomura et al.; Preprint 31a-ZA-6 of 51th Meeting of Union of applied Phys. Soc. , Mar. 2004, Tokyo University of Technology.
“Room Temperature Fabrication and Carrier Transport . . . (>10 cm2/Vs)”, Kamiya et al. ; Preprint 1a-F-5 of 65thMeeting of Appl. Phys. Soc., Sep. 2004, Tohoku Gakuen University.
Nomura et al., “Room-temperature Fabrication of Transparent Flexible Thin-film Transistors Using Amorphous Oxide Semiconductors,”Nature, vol. 432, 488-492 (2004).
Takagi et al., “Carrier Transport and Electronic Structure in Amorphous Oxide Semiconductor, a-InGaZnO4,”Thin Solid Films, vol. 486, 38-41 (2005).
Nomura et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,”Science, vol. 300, 1269-1272 (2003).

Affiliated with

Also associated with

Rating

Integrated circuits utilizing amorphous oxides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuits utilizing amorphous oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuits utilizing amorphous oxides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2669056