Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-09-17
2010-11-23
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257SE29002, C438S102000, C438S103000, C365S163000
Reexamination Certificate
active
07838861
ABSTRACT:
Embodiments of the present invention relate generally to integrated circuits, to methods for manufacturing an integrated circuit and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a programmable arrangement. The programmable arrangement includes a substrate having a main processing surface, at least two first electrodes, wherein each of the two first electrodes has a side surface being arranged at a respective angle with regard to the main processing surface, the side surfaces facing one another. The programmable arrangement may further include at least one second electrode and ion conducting material between each of the at least two first electrodes and the at least one second electrode, wherein the at least one second electrode is arranged partially between the side surfaces of the two first electrodes facing one another.
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Altis Semiconductor SNC
Qimonda AG
Smith Bradley K
Valentine Jami M
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