Integrated circuits including photo-optical devices and pressure

Metal working – Method of mechanical manufacture – Electrical device making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

296211, 29418, 156154, 156155, 73720, H01C 1706

Patent

active

050705962

ABSTRACT:
Integrated circuits are formed by bonding two substrates together on a moat or recess. If the moat is exposed at a side wall, an optical fiber is inserted therein and communicates optically with a photoelectric device in the substrate by a slant side wall of the moat. If the moat is sealed by a cover layer resulting from removing all or most of the top substrate leaving the bonding layer as a cover, a pressure responsive device is formed on the cover layer directly or in the remaining top substrate over the sealed cavity.

REFERENCES:
patent: 2692190 (1954-10-01), Pritikin
patent: 3864019 (1975-02-01), Smolinsky et al.
patent: 3994559 (1976-11-01), Crow
patent: 3997381 (1976-12-01), Wanlass
patent: 4121334 (1978-10-01), Wallis
patent: 4210923 (1980-07-01), North et al.
patent: 4294510 (1981-10-01), Chappell
patent: 4503709 (1985-03-01), Ruhle
patent: 4549338 (1985-10-01), Abend et al.
patent: 4611886 (1986-09-01), Cline et al.
patent: 4651120 (1987-03-01), Aagard
patent: 4721938 (1988-01-01), Stevenson
patent: 4756590 (1988-07-01), Forrest et al.
patent: 4760569 (1988-07-01), Mahlein
patent: 4771638 (1988-09-01), Sugiyama et al.
patent: 4814856 (1989-03-01), Kurtz et al.
patent: 4857746 (1989-08-01), Kuhlmann et al.
patent: 4897711 (1990-01-01), Blonter et al.
"Micro-Diaphragm Pressure Sensor", by Sugiyama et al.; 1986, IEEE.
"Scaling Limits in Batch-Fabricated Silicon Pressure Sensors", by Chau et al.; IEEE Transactions on Electron Devices, Apr. 1987.
"Fabrication Techniques for Integrated Sensor Microstructures", by Guckel et al.; 1986, IEEE.
"Silicon and Silicon Dioxide Thermal Bonding", by Black et al.; 1988 Materials Research Society.
"Pressure Sensitivity in Anisotropically Etched Thin-Diaphragm Pressure Sensors", by Clark et al., IEEE Transactions on Electron Devices, vol. Ed-26, No. 12, Dec. 1979.
"Wafer Bonding for Silicon-On-Insulator Technologies", by Lasky; 1986 American Institute of Physics.
"Dielectric Isolation of Silicon by Anodic Bonding", by Anthony; 1985 American Institute of Physics.
"Silicon and Silicon Dioxide Thermal Bonding for Silicon-on-Insulator", by Black et al.; 1988 American Institute of Physics.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated circuits including photo-optical devices and pressure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuits including photo-optical devices and pressure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuits including photo-optical devices and pressure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1031610

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.