Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Patent
1995-06-07
1997-11-25
Huff, Mark F.
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
257660, 430322, 430325, 430 5, H01L 2912, G03F 900
Patent
active
056910894
ABSTRACT:
A transistor device 10 is disclosed herein. A doped layer 14 of a radiation sensitive material is formed over a substrate 12. The radiation sensitive material 14 may be polyimide, polybenzimidazole, a polymer, an organic dielectrics, a conductor or a semiconductor and the substrate 12 may be silicon, quartz, gallium arsenide, glass, ceramic, metal or polyimide. A neutral (undoped) layer 16 of radiation sensitive material is formed over the doped layer 14. First and second source/drain regions 18 and 20 are formed in the neutral layer 16 and extend to a top portion of the doped layer 14. A gate region 22 is formed in a top portion of the neutral layer 16 between the first source/drain region 18 and second source/drain region 20 such that a channel region 24 is formed in the doped layer 14 beneath the gate region 22.
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Donaldson Richard L.
Huff Mark F.
Kesterson James C.
Matsil Ira S.
Texas Instruments Incorporated
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