Integrated circuits formed in radiation sensitive material and m

Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond

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428216, 428212, 428901, 257 61, 257272, 257352, 361748, 430270, B32B 900

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056770413

ABSTRACT:
A transistor device 10 is disclosed herein. A doped layer 14 of a radiation sensitive material is formed over a substrate 12. The radiation sensitive material 14 may be polyimide, polybenzimidazole, a polymer, an organic dielectrics, a conductor or a semiconductor and the substrate 12 may be silicon, quartz, gallium arsenide, glass, ceramic, metal or polyimide. A neutral (undoped) layer 16 of radiation sensitive material is formed over the doped layer 14. First and second source/drain regions 18 and 20 are formed in the neutral layer 16 and extend to a top portion of the doped layer 14. A gate region 22 is formed in a top portion of the neutral layer 16 between the first source/drain region 18 and second source/drain region 20 such that a channel region 24 is formed in the doped layer 14 beneath the gate region 22.

REFERENCES:
patent: 3704454 (1972-11-01), McCoy et al.
patent: 3816163 (1974-06-01), Yoldas
patent: 4098654 (1978-07-01), Helle et al.
patent: 4199650 (1980-04-01), Mirtich et al.
patent: 4222903 (1980-09-01), Heeger et al.
patent: 4257825 (1981-03-01), Schaumburg
patent: 4353954 (1982-10-01), Yamaoka et al.
patent: 4508749 (1985-04-01), Brannon et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 4707394 (1987-11-01), Chant
patent: 4733383 (1988-03-01), Waterbury
patent: 4772421 (1988-09-01), Ikenaga et al.
patent: 4772804 (1988-09-01), Grimaud et al.
patent: 4781971 (1988-11-01), Marikar et al.
patent: 4823180 (1989-04-01), Wieder et al.
patent: 4835118 (1989-05-01), Jones, Jr. et al.
patent: 4839219 (1989-06-01), Uekita et al.
patent: 4843034 (1989-06-01), Hemdon et al.
patent: 4843443 (1989-06-01), Ovshinsky et al.
patent: 4863833 (1989-09-01), Fukuyama et al.
patent: 4884119 (1989-11-01), Miller
patent: 4906966 (1990-03-01), Imamura et al.
patent: 4935164 (1990-06-01), Wessling et al.
patent: 4941033 (1990-07-01), Kishida
patent: 5017420 (1991-05-01), Marikar et al.
patent: 5028354 (1991-07-01), Smith et al.
patent: 5100762 (1992-03-01), Tanaka et al.
patent: 5101253 (1992-03-01), Mizutani et al.
patent: 5103293 (1992-04-01), Bonafina et al.
patent: 5119312 (1992-06-01), Groger et al.
patent: 5124778 (1992-06-01), Adachi
patent: 5130380 (1992-07-01), Carew
patent: 5236551 (1993-08-01), Pan
patent: 5250835 (1993-10-01), Izawa
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5329152 (1994-07-01), Janai et al.
patent: 5376502 (1994-12-01), Novak et al.
patent: 5493129 (1996-02-01), Matsuzaki et al.
"A Wafer-Scale Digital Integrator Using Restructurable VSLI", Raffel et al., IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 479-486.
"Arsenic Trifluoride-Arsenic Pentafluoride Synergism in the Formation of Electrically Conductive Poly (p-Phenylene Sulfide)", Frommer et al., Journal of Polymer Science, Jan. 1983, vol. 21, No. 1, pp. 39-44.
"BJT Transistor Circuit Configurations", Circuits Electronics, Professional Publications, Inc., pp. 51-57.
"Circuiterie sur film polyimide", Tont i'Electronique, Aug.-Sep. '79, pp. 25-30, See FIGS. 3-5 (no translation).
"Cocyclotrimerization of Aryl Acetylenes: Substituent Effects on Reaction Rate", Dawson, et al., American Chemical Society, Chapter 38, May 1987, pp. 445-456.
"Complex Triarylsulfonium Salt photoinitiators. I. The Identification, Characterization, and Syntheses of a New Class of Triarylsulfonium Salt Photoinitiators", Crivello et al., Journal of Polymer Science, Polymer Chemistry Edition, Aug. 1980, vol. 18, No. 8, pp. 2676-2695.
"Conducting complexes of polyphenylene sufides", Shacklette et al., The Journal of Chemical Physics, Aug. 1981, vol. 75, No. 4, pp. 1919-1927.
"Electronic Circuits Made Quick `n` Easy", Wall Street Journal, Aug. 1990, 1 sheet. See paragraph 3.
"Excimer Lasers", Rhodes, Topics in Applied Physics, '84, pp. 85-137. See FIGS. 4.4 (p. 111) and 4.6 (p. 119).
"Ion beam irradiated via-connect through an insulating polymer layer", Venkatesan et al., Journal of Appl. Physics 55(4), American Institute of Physics, Feb. 1984. See FIGS. 1-3, pp. 1212-1214.
"Laser-formed connections using polyimide", Raffel et al., Applied Physics Letter 42(8), American Institute of Physics, Apr. 1983. See FIGS. 1-2, pp. 705-706.
"Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", Levy et al., Journal of the Electrochemical Society, Feb. 1987. See FIGS. 1, 2, 5, pp. 37C-49C.
"Material and Processing Technologies of Polyimide for Advanced Logic Double Metal Devices", Moghadam, Intel Corporation, Jun. 23-25, '87. See FIGS. 9a, 9b, pp. 622-636.
"Multilayer Interconnections Using Polyimide Dielectrics and Aluminum Conductors", Tsunetsugu et al., The International Journal for Hybrid Microelectronics, vol. 8, No. 2, Jun. 1985, pp. 21-26.
"New Polyimide Chemistry Matches Coefficient of Expansion of Silicon and Alumina Substrates", Pyralin.RTM.LX Polyimide Coatings, DuPont Electronics, Apr. 1989, pp. 17. This DuPont brochure material provides technical data on various polyimides and cites two patents.
"Nondestructive single-shot soft x-ray lithography and contact microscopy using a laser-produced plasma source", Rosser et al., Applied Optics, vol. 26, No. 19, Oct. 1987, pp. 4313-4318.
"Photodoped" Conducting Polymers. The synthesis of Phenylated Poly (p-Phenylene Sulfide), Novak et al., Department of Chemistry, University of California at Berkeley, pp. 482-483.
"Planar Multilevel Interconnection Technology Employing a Polyimide", Mukai et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, Aug. 1978, pp. 462-467.
"Polyimides as Interlayer Dielectrics for High-Performance Interconnections of Integrated Circuits", Jensen, Physical Sciences Center, Honeywell Inc., '87, Chapter 40, pp. 466-483. See FIGS. 1, 3, 4, 7.
"Polyimides in Microelectronics", Senturia, Microsystems Technology Laboratories, Chapter 36, '87, pp. 428-436. See first two paragraphs on p. 428 and FIG. 2.
"Polymer Processing to Thin Films for Microelectronic Applications", Jenekhe, Chapter 22, Physical Sciences Center, Honeywell, Inc., pp. 261-269. See FIGS. 1 and 2.
"Polymers for High Technology", Electronics and Photonics, Bowden et al., ACS Symposium Series, American Chemical Society, p. 2.
"Polymers In Photonic Applications and Developments", Meredith, Polymers for High Technology, pp. 370-371. See paragraphs 3-4 on p. 370.
"Preparation of Polyimide Mono-and Multilayer Films", Kakimoto et al., Tokyo Institute of Technology, '87, pp. 484-495. See Abstract on p. 485.
"Soluble Aromatic Polimides for Film and Coating Applications", St. Clair et al., NASA, Materials Division, Chapter 37, '87, pp. 437-444. See pp. 437-438--`Experimental`.
"The MOS Field-Effect Transistor", Field-Effect Transistor, Chapter 8, pp. 314-327.
"X-ray lithography", Heuberger, J. Vac. Sci. Technology B 6(1), Jan./Feb. '88, pp. 107-121. See p. 107, col. 2, FIGS. 12, 17.
"Optical and electrical properties on ion-beam-irradiated films of organic molecular solids and polymers", 1984 American Institute of Physics, M. L. Kaplan et al.
"Plastic chips are here", Electronics & Wireless World, Research Notes, Dec. 1988, p. 1241.
"Polymer Device Cited as Possible LED Substitute", Wall Street Journal, Jun. 11, 1992.
"Quick Change plastic may make for cheaper chips", New Scientist, Sep. 15, 1990, p. 36.
"Radiation-induced electrical conductivity of poly", Chamical Abstracts, vol. 103, 1985, p. 24.
"Variablel-Resistivity Material for Memory Circuits", single page, NASA's Jet Propulsion Laboratory, 2301 NTIS Tech Notes, (1990) Apr., Springfield, VA. US.

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