Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2002-12-12
2003-12-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S629000, C438S667000, C438S697000
Reexamination Certificate
active
06664129
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to integrated circuits.
SUMMARY
In some embodiments of the present invention, one or more openings are formed in an active side of a semiconductor wafer, a dielectric is formed in the openings, and a conductor (e.g. metal) is formed in the openings over the dielectric. Then the wafer is etched from the backside to expose the conductor. The openings become through holes, and the exposed conductor provides contacts protruding from the through holes. Each contact has a protruding outer surface not covered by the dielectric. At least a portion of the outer surface is either vertical or is sloped outwards (laterally away from the corresponding through hole) when the surface is traced in the direction away from the wafer. The protruding contacts are soldered to some substrate (e.g. another wafer or a printed circuit board). The solder reaches and at least partially covers the contacts' surface that is vertical or sloped outwards. Consequently, the strength of the solder bond is increased.
In some embodiments, the dielectric forms a protrusion around each contact. Throughout the protrusion, the dielectric becomes gradually thinner around each contact as the dielectric is traced in the direction away from the wafer. The thinner dielectric is more flexible, and therefore is less likely to detach from the contact if the contact is pulled sideways.
Other embodiments and variations are within the scope of the invention. The invention is defined by the appended claims.
REFERENCES:
patent: 3739463 (1973-06-01), Aird et al.
patent: 3761782 (1973-09-01), Youmans
patent: 3810129 (1974-05-01), Behman et al.
patent: 3811117 (1974-05-01), Anderson, Jr. et al.
patent: 3838501 (1974-10-01), Umbaugh
patent: 3881884 (1975-05-01), Cook et al.
patent: 3991296 (1976-11-01), Kojima et al.
patent: 3993917 (1976-11-01), Kalter
patent: 4139401 (1979-02-01), McWilliams et al.
patent: 4141135 (1979-02-01), Henry et al.
patent: 4368106 (1983-01-01), Anthony
patent: 4394712 (1983-07-01), Anthony
patent: 4463336 (1984-07-01), Black et al.
patent: 4467518 (1984-08-01), Bansal et al.
patent: 4603341 (1986-07-01), Bertin et al.
patent: 4612083 (1986-09-01), Yasumoto et al.
patent: 4628174 (1986-12-01), Anthony
patent: 4722130 (1988-02-01), Kimura et al.
patent: 4729971 (1988-03-01), Coleman
patent: 4769738 (1988-09-01), Nakamura et al.
patent: 4807021 (1989-02-01), Okumura
patent: 4822755 (1989-04-01), Hawkins et al.
patent: 4842699 (1989-06-01), Hua et al.
patent: 4897708 (1990-01-01), Clements
patent: 4939568 (1990-07-01), Kato et al.
patent: 4954458 (1990-09-01), Reid
patent: 4978639 (1990-12-01), Hua et al.
patent: 4996587 (1991-02-01), Hinrichsmeyer et al.
patent: 5024970 (1991-06-01), Mori
patent: 5064771 (1991-11-01), Solomon
patent: 5071792 (1991-12-01), Van Vonno et al.
patent: 5135878 (1992-08-01), Bartur
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5166097 (1992-11-01), Tanielian
patent: 5191405 (1993-03-01), Tomita et al.
patent: 5225771 (1993-07-01), Leedy
patent: 5229647 (1993-07-01), Gnadinger
patent: 5259924 (1993-11-01), Mathews et al.
patent: 5268326 (1993-12-01), Lesk et al.
patent: 5270261 (1993-12-01), Bertin et al.
patent: 5307942 (1994-05-01), Quelfeter et al.
patent: 5309318 (1994-05-01), Beilstein, Jr. et al.
patent: 5313097 (1994-05-01), Haj-Ali-Ahmadi et al.
patent: 5314844 (1994-05-01), Imamura
patent: 5322816 (1994-06-01), Pinter
patent: 5323035 (1994-06-01), Leedy
patent: 5340771 (1994-08-01), Rostoker
patent: 5380681 (1995-01-01), Hsu
patent: 5399898 (1995-03-01), Rostoker
patent: 5414637 (1995-05-01), Bertin et al.
patent: 5426566 (1995-06-01), Beilstein, Jr. et al.
patent: 5453404 (1995-09-01), Leedy
patent: 5463246 (1995-10-01), Matsunami
patent: 5466634 (1995-11-01), Beilstein, Jr. et al.
patent: 5467305 (1995-11-01), Bertin et al.
patent: 5468663 (1995-11-01), Bertin et al.
patent: 5472914 (1995-12-01), Martin et al.
patent: 5478781 (1995-12-01), Bertin et al.
patent: 5489554 (1996-02-01), Gates
patent: 5494832 (1996-02-01), Lehmann et al.
patent: 5502333 (1996-03-01), Bertin et al.
patent: 5502667 (1996-03-01), Bertin et al.
patent: 5504036 (1996-04-01), Dekker et al.
patent: 5506753 (1996-04-01), Bertin et al.
patent: 5517057 (1996-05-01), Beilstein, Jr. et al.
patent: 5517754 (1996-05-01), Beilstein, Jr. et al.
patent: 5532519 (1996-07-01), Bertin et al.
patent: 5550942 (1996-08-01), Sheem
patent: 5561622 (1996-10-01), Bertin et al.
patent: 5563086 (1996-10-01), Bertin et al.
patent: 5567653 (1996-10-01), Bertin et al.
patent: 5567654 (1996-10-01), Beilstein, Jr. et al.
patent: 5571754 (1996-11-01), Bertin et al.
patent: 5596226 (1997-01-01), Beilstein, Jr. et al.
patent: 5627106 (1997-05-01), Hsu
patent: 5646067 (1997-07-01), Gaul
patent: 5654127 (1997-08-01), Leedy
patent: 5656553 (1997-08-01), Leas et al.
patent: 5691248 (1997-11-01), Cronin et al.
patent: 5707485 (1998-01-01), Rolfson et al.
patent: 5766984 (1998-06-01), Ramm et al.
patent: 5767001 (1998-06-01), Bertagnolli et al.
patent: 5824595 (1998-10-01), Igel et al.
patent: 5843844 (1998-12-01), Miyanaga
patent: 5846879 (1998-12-01), Winnerl et al.
patent: 5851845 (1998-12-01), Wood et al.
patent: 5858256 (1999-01-01), Minne et al.
patent: 5888882 (1999-03-01), Igel et al.
patent: 5888883 (1999-03-01), Sasaki et al.
patent: 5979475 (1999-11-01), Satoh et al.
patent: 5998292 (1999-12-01), Black et al.
patent: 6004867 (1999-12-01), Kim et al.
patent: 6036872 (2000-03-01), Wood et al.
patent: 6083811 (2000-07-01), Riding et al.
patent: 6121119 (2000-09-01), Richards et al.
patent: 6127274 (2000-10-01), Igel et al.
patent: 6162701 (2000-12-01), Usami et al.
patent: 6176966 (2001-01-01), Tsujimoto et al.
patent: 6184060 (2001-02-01), Siniaguine
patent: 0238089 (1987-03-01), None
patent: 0 698 288 (1996-02-01), None
patent: 0757431 (1997-02-01), None
patent: 0807964 (1997-11-01), None
patent: 60-007149 (1985-01-01), None
patent: 62-219954 (1987-09-01), None
patent: 04-025122 (1992-01-01), None
patent: 08-502146 (1996-03-01), None
patent: 92/03848 (1992-03-01), None
patent: 94/09513 (1994-04-01), None
patent: 94/25981 (1994-11-01), None
patent: 96/21943 (1996-07-01), None
patent: 97/45856 (1997-12-01), None
patent: 97/45862 (1997-12-01), None
Christensen, C., et al., “Wafer Through-Hole Interconnections with High Vertical Wiring Densities”,IEEE Trans. on Comp., Pkg, & MFG. Tech, Part A, vol. 19, No. 4, Dec. 1996, pp. 516-521.
Anthony, T., “Forming Feedthroughs in Laser-Drilled Holes in Semiconductor Wafers by Double-Sided Sputtering”,IEEE Trans. on Comp., Hybrids, & Mfg. Tech, vol. CHMT-5, No. 1, Mar. 1982, pp. 171-180.
Agrikov, U. et al., “Dynamical Plasma Treatment of HIC (Hybrid Integrated Circuits) Substrates”, Electronic Techniques, Ser. 10, Microelectronic Devices, 5(71), 1988, pp. 30-32, Russia.
IPEC Precision brochure for PACEJET II (©1996), 2 pages.
Patent Abstracts of Japan, Publication No. JP 4-133472.
Siniaguine, Oleg, et al., “Plasma Processing of Silicon Wafers at Atmospheric Pressure”,Electronic Industry, Jun. 1994, pp. 27-30.
Siniaguine, Oleg, “Plasma Jet Etching at Atmospheric Pressure for Semiconductor Production”, First Int'l Symposium on Plasma Process-Induced Damage, May 13-14, 1996, Santa Clara, CA, pp. 151-153.
AZ Corporation, “Plasma Jet Etching Technology and Equipment; Silicon Wafer Thinning & Isotropical Etching at Atmospheric Pressure”, Semicon/Europe, Apr. 1995, Geneva, Switzerland, 4 pages.
Fourson George
MacPherson Kwok & Chen & Heid LLP
Shenker Michael
Toledo Fernando
Tri-Si Technologies, Inc.
LandOfFree
Integrated circuits and methods for their fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuits and methods for their fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuits and methods for their fabrication will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3164468