Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2011-07-19
2011-07-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S508000, C257S276000, C257S587000, C257S621000, C257SE23145, C438S027000, C438S214000, C438S411000, C438S588000
Reexamination Certificate
active
07982280
ABSTRACT:
An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively. The first source region is arranged between first sides of the first and second drain regions and the second and third source regions are arranged adjacent to second sides of the first and second drain regions. A fourth source region is arranged adjacent to third sides of the first and second drain regions and a fifth source region is arranged adjacent to fourth sides of the first and second drain regions. First and second drain contacts are arranged in the first and second drain regions, respectively. At least two of the first, second, third, fourth and fifth source regions and the first and second drain regions communicate with at least two of the N plane-like metal layers.
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Marvell World Trade Ltd.
Pert Evan
Wilson Scott R
LandOfFree
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