Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-08
2011-03-08
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
07903470
ABSTRACT:
An integrated circuit is provided. The integrated circuit includes a memory device and a discharge circuit. The discharge circuit discharges the well voltage line and the first voltage line of the memory device after the end of the erasing period and includes a first and second switch circuit and a first and second control voltage supplier. The first switch circuit is coupled between the well voltage line, the first voltage line and a second supplier. The second switch circuit is coupled between the first switch circuit and a reference voltage. The first control voltage supplier is coupled to the first switch circuit and supplies a first control voltage to turn on the first switch circuit during a first discharge period. The second control voltage supplier is coupled to the second switch circuit, and supplies a second control voltage to turn on the second switch circuit during a second discharge period.
REFERENCES:
patent: 5740109 (1998-04-01), Morton et al.
patent: 6667910 (2003-12-01), Abedifard et al.
patent: 7411835 (2008-08-01), Darrer
patent: 7738299 (2010-06-01), Kuriyama et al.
Arakawa Hideki
Kyoji Yamasaki
Tseng Te-Chang
Tu Chun-Yi
Muncy Geissler Olds & Lowe, PLLC
Phung Anh
Powerchip Semiconductor Corp.
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