Integrated circuits

Details Integrated circuits Integrated circuits

1984-10-17

1987-02-10

Edlow, Martin H.

357 36, 357 42, 357 43, 357 89, H01L 2972

Patent

active

046426671

ABSTRACT:
A bipolar lateral transistor is formed in a highly doped p.sup.- -type well (13) the base contained in a lightly doped n.sup.- -type well (12) the collector in a very lightly doped p.sup.-- -type substrate (11). The arrangement is such that the boundary of the collector/base depletion region is distributed so that the non-depleted base region is wide below the emitter but very narrow at the surface. This defines a narrow active base region in the lateral emitter-collector path thus ensuring that the transistor operates predominantly in its lateral rather than its vertical mode. The structure is compatible with conventional CMOS and NMOS processing techniques.

REFERENCES:
patent: 3391035 (1968-07-01), MacKintosh
patent: 4292642 (1981-09-01), Appels et al.
Castrucci et al., "Bipolar/FET High-Performance Circuit," IBM Tech. Discl. Bull., vol. 16, No. 8, Jan. 1974, pp. 2719-2720.

Affiliated with

Also associated with

Rating

Integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2365748