Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-15
1998-11-17
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257377, 257382, 257385, 257756, 257903, H01L 2348, H01L 2352, H01L 2940, H01L 2362
Patent
active
058380680
ABSTRACT:
A semiconductor processing method includes: a) providing a substrate having a base region to which electrical connection is to be made; b) providing a first layer of a conductive first material; c) providing an etch stop layer over the first layer; d) etching a contact opening through the etch stop and first layers to the base region; e) providing a second layer of first material outwardly of the etch stop layer and within the contact opening to a thickness greater than the first layer thickness and extending outwardly beyond the contact opening upper edge; f) removing first material of the second layer and defining a second layer plug within the contact, the second layer plug having an outermost surface extending outwardly beyond the contact opening upper edge and thereby providing the second layer plug to be of greater thickness than the first layer; g) masking outwardly of the first layer and the second layer plug to define a mask pattern for definition of a circuit component from the first layer which connects with the base region through the second layer plug; and h) etching unmasked portions of the first layer and second layer plug to define a circuit component which connects with the base region through the second layer plug, the greater thickness of the second layer plug as compared to the thickness of the first layer restricting etching into the base region during etching. Integrated circuitry is also disclosed.
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Arroyo Teresa M.
Micro)n Technology, Inc.
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