Integrated circuit with vertical bipolar power transistors and i

Details Integrated circuit with vertical bipolar power transistors and i Integrated circuit with vertical bipolar power transistors and i

1992-07-02

1996-10-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257502, 257544, 257547, 257549, 257550, 257557, 257558, H01L 2900

Patent

active

055657010

ABSTRACT:
An integrated circuit containing both power and small-signal NPN bipolar devices. The small-signal devices use lateral current flow, and are completely surrounded (laterally and vertically) by an N-type well region. The N-type well region itself is completely surrounded (laterally and vertically) by a P-type isolation region. This double isolation provides improved protection against turn-on of parasitic devices, which can cause leakage problems in the conventional device structures. Optionally a self-aligned process step is used to provide a graded base doping profile in the small-signal devices.

REFERENCES:
patent: 4721684 (1988-01-01), Musumeci
Integrated Circuits for the Control of High Power, Wrathall, Tam, Terry, Robb, pp. 408-411, 1983.

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