Integrated circuit with tungsten plug containing amorphization l

Details Integrated circuit with tungsten plug containing amorphization l Integrated circuit with tungsten plug containing amorphization l

1998-04-27

2000-01-18

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257753, 257758, H01L 2348

Patent

active

060160098

ABSTRACT:
A process of forming a tungsten contact plug, on an integrated circuit (IC), that is substantially free of seam formation is described. The process includes forming a dielectric layer on a surface of a substrate, forming a via in the dielectric layer, blanket depositing a first bulk layer of tungsten on the dielectric layer and partially filling the via, blanket depositing an amorphous or a microcrystalline layer of tungsten over the first bulk layer of tungsten such that growth of tungsten grains inside the via is effectively inhibited, and blanket depositing a second bulk layer of tungsten on the amorphous or microcrystalline layer.

REFERENCES:
patent: 5409861 (1995-04-01), Choi
patent: 5470792 (1995-11-01), Yamada
patent: 5489552 (1996-02-01), Merchant et al.
patent: 5661080 (1997-08-01), Hwang et al.
patent: 5668064 (1997-09-01), Park et al.
Author Unknown, "Process Characterization", User's Guide to Tungsten Processing, p. 5-2 (prior to Mar. 20, 1998).
M. Iwasaki, et al., Blanket CVD-W Formed by H.sub.2 Reduction of WF.sub.6 on Tin for Planar Interconnection, Materials Research Society, Symposium Proc. VLSI V, (1990).
John E.J. Schmitz. "Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ULSI Applications", Noyes Publications, USA, 1992, pp. 32, 33, 64-67, 102-103.
M. Iwasaki, H. Itoh, T. Katayama, K. Tsukamoto and Y. Akasaka, "Blanket CVD-W Formed by H.sub.2 Reduction of WF.sub.6 on Tin for Planar Interconnection" Mat.Res.Soc. Synp.Proc. VLSI V, 1990, pp. 187-193.
R.V. Joshi, E. Mehter, M. Chow, M. Ishaq, S. Kang, P. Geraghty and J. Mclnerney, "High Growth Rate CVD--W Process For Filling High Aspect Ratio Sub-Micron Contacts/Lines" Mat.Res.Soc.Symp.Proc.VLSI V, 1990, pp. 157-166.
A. Sakamoto, H. Tamura, M. Yoshimaru and M. Ino, Proc. Appl. Phys. Soc., Japan, Fall Meeting, Paper 28A-SZD-22, p. 670 (1990).
C.C. Tang and D. W. Hess, "Plasma-enhanced Chemical Vapor Deposition of B-tungsten, a Metastable Phase" Appl. Phys. Lett., v.45(6), pp. 633-635 (1984).

Affiliated with

Also associated with

Rating

Integrated circuit with tungsten plug containing amorphization l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit with tungsten plug containing amorphization l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit with tungsten plug containing amorphization l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-565064