Integrated circuit with threshold regulation

Details Integrated circuit with threshold regulation Integrated circuit with threshold regulation

1977-07-18

1979-02-27

Anagnos, Larry N.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307200B, 307297, H03K 102, H03K 3353

Patent

active

041421140

ABSTRACT:
Threshold voltage regulation of field-effect transistors on a common substrate of an integrated circuit is achieved by adjusting the back bias on the substrate using a charge pump that is selectively operated whenever the threshold voltage of a designated enhancement mode FET falls below a reference voltage. A voltage divider provides the reference voltage that is applied to the gate of the enhancement mode FET, which when turned-on enables the charge pump.

REFERENCES:
patent: T954006 (1977-01-01), Lee et al.
patent: 3406298 (1968-10-01), Axelrod
patent: 3609414 (1971-09-01), Pleshko et al.
patent: 3700981 (1972-10-01), Masuhara
patent: 3757145 (1973-09-01), Adam et al.
patent: 3794862 (1974-02-01), Jenne
patent: 3806741 (1974-04-01), Smith
patent: 4099980 (1977-09-01), Maitland
Blaser et al., "Substrate and Load Gate Voltage Compensation"; IEEE--Int'l Solid-State Circuits Conf.; 2/18/76; pp. 56-57.
Blaser et al.; IBM Tech. Discl. Bull.; vol. 19, No. 7, pp. 2530-2531; 12/1976.
Hummel, "Sentry Circuit for Substrate Voltage Control"; IBM Tech. Discl. Bull.; vol. 15, No. 2, pp. 478-479; 7/1972.
Frantz, "Threshold Voltage Control for N-Channel Mosfet Devices"; IBM Tech. Discl. Bull,; vol. 12, No. 12, p. 2078; 5/1970.

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