Integrated circuit with thin film resistors and a method for co-

Details Integrated circuit with thin film resistors and a method for co- Integrated circuit with thin film resistors and a method for co-

1997-02-12

1999-11-02

Niebling, John F.

Semiconductor device manufacturing: process

Making passive device

Resistor

438383, 438384, 438385, H01L 2120

Patent

active

059769440

ABSTRACT:
FIG. 5b shows a first thin film resistor 14 formed by direct etching or lift off on a first dielectric layer 12 that covers an integrated circuit (not shown) in a silicon substrate 10. A patterned layer of photoresist covers a portion of the second thin film resistor material 30. The second thin film resistor material 30 is different from the first thin film resistor material 14. The exposed portion of the second thin film resistor material 30 is removed to leave first and second thin film resistors on the first dielectric layer 12.

REFERENCES:
patent: 4307338 (1981-12-01), Frederiksen et al.
patent: 4603291 (1986-07-01), Nelson
patent: 4947169 (1990-08-01), Smith et al.
patent: 5369309 (1994-11-01), Bacrania et al.
patent: 5547896 (1996-08-01), Linn et al.

Affiliated with

Also associated with

Rating

Integrated circuit with thin film resistors and a method for co- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit with thin film resistors and a method for co-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit with thin film resistors and a method for co- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2134486