Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S203000
Reexamination Certificate
active
07084439
ABSTRACT:
In order for circuit blocks1to3composed by the CMOS process, and analog lines5-1, 5-2, and5-3connected thereto not to overlap on the layout, the analog lines5-1and5-2are wired so that such lines roundabout the layout of the AM/FM common circuit block3. Through this, the distance of the signal line within the AM/FM common circuit block3and the analog lines5-1and5-2can become as long as possible, the signal line within the AM/FM common circuit block3and the analog lines5-1and5-2would not be coupled via parasitic capacity, and mutual interference occurring between the signal line and the analog lines5-1and5-2can be suppressed.
REFERENCES:
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“Multiple Twisted Dataline Techniques for Multigigabit DRAM's”, Dong-Sun Min and Dietrich W. Langer, IEEE Journal of Solid-State Circuits, vol. 34, No. 6, pp. 856-865, Jun. 1999.
Connolly Bove & Lodge & Hutz LLP
Hume Larry J.
Nguyen Cuong
Niigata Seimitsu Co., Ltd.
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