Patent
1978-07-31
1980-11-11
James, Andrew J.
357 47, 357 48, 357 34, 357 51, 357 68, H01L 2972, H01L 2702, H01L 2704
Patent
active
042336180
ABSTRACT:
An integrated silicon circuit includes a plurality of high current power transistors. Each of the power transistors is formed in an epitaxial pocket of N-type conductivity being defined by a surrounding P-type isolation wall. A large N-type plug region occupies a central position in the pocket over which lies a large aluminum collector terminal pad. The P-type base region is an elongated strip region essentially surrounding the N-type plug. An elongated emitter lies within the base strip region and is contacted along its entire length by a metal layer that extends broadly in radial directions from the pocket to contact the isolation wall and leading to a ground terminal pad of the entire integrated circuit. The ratio of the current carrying capability of this power transistor to the silicon area occupied by the transistor is high.
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James Andrew J.
Sprague Electric Company
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