Integrated circuit with oxidation-junction isolation and channel

Details Integrated circuit with oxidation-junction isolation and channel Integrated circuit with oxidation-junction isolation and channel

1974-04-08

1976-06-01

Larkins, William D.

357 49, 357 52, 357 56, H01L 2704

Patent

active

039613569

ABSTRACT:
An oxide-isolated, vertical bipolar transistor integrated circuit provided with a channel stop preventing inversion of the base region of the transistors and serving as a channel stop between buried isolation junctions, the channel stop bordering the whole of the oxide isolation.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3648125 (1972-03-01), Peltzer
patent: 3665330 (1972-05-01), Tharmaratnam
patent: 3751722 (1973-08-01), Richman
patent: 3796613 (1974-03-01), Magdo et al.
Appels et al., "Local Oxidation of Silicon . . . ," Philips Research Reports, vol. 25, pp. 118-132 (1970).

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