Integrated circuit with increased heat transfer

Details Integrated circuit with increased heat transfer Integrated circuit with increased heat transfer

2007-08-21

2007-08-21

Malsawma, Lex H. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

C257SE23102

Reexamination Certificate

active

11050572

ABSTRACT:
A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.

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