Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-06-28
2010-06-08
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S376000, C257S544000, C257SE25010
Reexamination Certificate
active
07732890
ABSTRACT:
The high voltage integrated circuit comprises a P substrate. An N well barrier is disposed in the substrate. Separated P diffusion regions forming P wells are disposed in the substrate for serving as the isolation structures. The low voltage control circuit is located outside the N well barrier. A floating circuit is located inside the N well barrier. In order to develop a high voltage junction barrier in between the floating circuit and the substrate, the maximum space of devices of the floating circuit is restricted.
REFERENCES:
patent: 5714796 (1998-02-01), Chishiki
patent: 6344959 (2002-02-01), Milazzo
patent: 6781422 (2004-08-01), Yang
patent: 6836173 (2004-12-01), Yang
patent: 2002/0195659 (2002-12-01), Jimbo et al.
Chiang Chiu-Chih
Huang Chih-Feng
Lin Long Shih
Wu You-Kuo
Jianq Chyun IP Office
System General Corp.
Warren Matthew E
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