Integrated circuit with high power, vertical output transistor c

Details Integrated circuit with high power, vertical output transistor c Integrated circuit with high power, vertical output transistor c

1989-05-22

1990-09-11

Wojciechowicz, Edward J.

357 238, 357 2312, H01L 2978

Patent

active

049567004

ABSTRACT:
A power transistor structure (10) is formed on an n+ substrate (12). A p- epitaxial layer (16) is formed on the substrate (12) and has an upper surface (19). An n+ source region (26) extends from the upper surface (19) into the epitaxial layer (16). An n-type drain region (22, 24) is spaced from the source region (26) and extends from the upper surface (19) through the epitaxial layer (16) to the substrate (12). An insulating layer (28) on the upper surface (19) extends between the source region (26) and the drain region (22, 24). A conductive gate electrode (34) on the insulating layer (28) extends between the source region (26) and the drain region (22, 24). A conductive electrode (30) is electrically connected to the source region (26). Another conductive electrode (36) is electrically connected to the substrate (12).

REFERENCES:
patent: 3996655 (1976-12-01), Cunninghan et al.
patent: 4290077 (1981-09-01), Rosen
patent: 4325180 (1982-04-01), Curran
patent: 4376286 (1983-03-01), Lidav et al.
patent: 4589004 (1986-05-01), Yasuda
patent: 4614959 (1986-09-01), Nakagawa
patent: 4661838 (1987-04-01), Wildi et al.
patent: 4686551 (1987-08-01), Mihara
Grove, A., Physics and Technology of Semiconductor Devices, John Wiley, 1967, pp. 330-331.
Sze, S. M., Semiconductor Devices, John Wiley, 1985, pp. 422-423.

Affiliated with

Also associated with

Rating

Integrated circuit with high power, vertical output transistor c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated circuit with high power, vertical output transistor c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit with high power, vertical output transistor c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1187980