Integrated circuit with electrically programmable fuse resistor

Details Integrated circuit with electrically programmable fuse resistor Integrated circuit with electrically programmable fuse resistor

1998-09-25

2000-07-11

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Fusible

365201, 365210, G11C 1700

Patent

active

060882565

ABSTRACT:
Composite layers of titanium silicide and polysilicon define a fuse resistor within a programmable fuse element that increases its resistance from about 50 ohms in the unprogrammed state to about 250 K-ohms in the programmed state by creating a discontinuity in the silicide layer immediately over a PN junction in the polysilicon layer. The resistance of the fuse resistor in the programmed state is determined by the reverse-biased diode characteristic of the PN junction. Portions of a metallic layer overlie portions of the fuse resistor except at the site of the PN junction in the polysilicon layer so that the silicide is preferentially heated immediately above the PN junction to cause the discontinuity to occur at that site. The metallic layer portions serve both as a heat sink for the underlying portions of the silicide layer and as electrical connections to the fuse resistor.

REFERENCES:
patent: 5956274 (1999-09-01), Elliott et al.

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