Integrated circuit with contact region and multiple etch...

Details Integrated circuit with contact region and multiple etch... Integrated circuit with contact region and multiple etch...

2011-07-12

2011-07-12

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23145

Reexamination Certificate

active

07977797

ABSTRACT:
The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This contact formation process provides relatively small substrate connections while addressing critical lithographic printing limitation concerns in forming contact holes with small dimensions. In one embodiment, a multiple etch stop insulation layer comprising multiple etch stop layers is deposited. A contact region is formed in the multiple etch stop insulation layer by selectively removing (e.g., etching) some of the multiple etch stop insulation layer. In one embodiment, a larger portion of the multiple etch stop insulation layer is removed close to the metal layer and a smaller portion is removed closer to the substrate. The different contact region widths are achieved by performing multiple etching processes controlled by the multiple etch stop layers in the multiple etch stop insulation layer and spacer formation to shrink contact size at a bottom portion. Electrical conducting material (e.g., tungsten) is deposited in the contact region.

REFERENCES:
patent: 5912188 (1999-06-01), Gardner et al.
patent: 6078073 (2000-06-01), Habu et al.
patent: 6083822 (2000-07-01), Lee
patent: 6365504 (2002-04-01), Chien et al.
patent: 6441418 (2002-08-01), Shields et al.
patent: 7361587 (2008-04-01), Li et al.
patent: 2002/0008323 (2002-01-01), Watanabe et al.
patent: 2005/0003656 (2005-01-01), Chung

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